In this paper we introduce an approach to increase density of field -effect heterotransistors in the framework of a transimpedance amplifier. In the framework of the approach, we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should be annealed in the framework of an optimized scheme. We also consider an approach to decrease the value of mismatch -induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch -induced stress.