This study investigated the influence of the metal fraction and the real and imaginary components of the dielectric function of the host matrix on the local field enhancement and optical bistability ( OB) of cylindrical nanoinclusions within both passive and active host matrices. By solving the Laplace equation in the quasi-static limit, we derived expressions for the electric potentials of the cylindrical nanoinclusions. These expressions were then integrated with the Lorentz-Drude model to obtain the equation for the enhancement factor within the core of the cylindrical nanoinclusions. The results demonstrate that composites comprising metal-coated dielectric nanoparticles experience a significant increase in the local field at two resonant frequencies as the metal fraction rises and the value of the imaginary part of the dielectric properties of the host matrix rises in active host matrices. Conversely, for nanoinclusions with dielectric-coated metal core, the enhancing local field factor notably increases only at one resonant frequency as the metal fraction decreases, while increasing the value of imaginary part in active host matrices. Additionally, the investigation shows that an increase in the metal fraction leads to an expansion of the bistable region of OB. Specifically, within passive and active host matrices, augmenting the metal fraction of metal covered dielectric nanoinclusions results in higher incident field requirements at each switching-up threshold point, leading to a broader bistable region. Moreover, we observed that the bistable area of OB in active host matrices of cylindrical core-shell nanoinclusions increases as the magnitude of the imaginary part of the dielectric function of the host matrix increases. The enhancement of electromagnetic wave properties opens up the potential for the emergence of nonlinear optical phenomena, such as optical bistability. Optical bistability plays a crucial role in applications related to optical communication and computing, such as optical sensing, optical switches, and memory elements.