Article
Multiplicative topological descriptors of Silicon carbide
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Abstract
Topological indices helps us to collect information about algebraic graphs and gives us mathematical approach to understand the properties of chemical structures. In this paper, we aim to compute multiplicative degree-based topological indices of Silicon-Carbon Si2C3−III[p,q] and SiC3−III[p,q] .
Keywords
Topological index, molecular graph, Silicon carbide, ??
Citation
Virk, A. U. R., Abbas, T., & Khalid, W. (2019). Multiplicative topological descriptors of silicon carbide. Applied Mathematics and Nonlinear Sciences, 4(1), 181–190. https://doi.org/10.2478/AMNS.2019.1.00018
A. U. R. Virk, T. Abbas and W. Khalid, “Multiplicative topological descriptors of silicon carbide,” Applied Mathematics and Nonlinear Sciences, vol. 4, no. 1, pp. 181–190, 2019, doi: 10.2478/AMNS.2019.1.00018.
Virk AUR, Abbas T, Khalid W. Multiplicative topological descriptors of silicon carbide. Applied Mathematics and Nonlinear Sciences. 2019;4(1):181–190. doi:10.2478/AMNS.2019.1.00018.
Virk, A. U. R., Abbas, T. and Khalid, W. (2019), ‘Multiplicative topological descriptors of silicon carbide’, Applied Mathematics and Nonlinear Sciences, 4(1), pp. 181–190. Available at: https://doi.org/10.2478/AMNS.2019.1.00018.
Virk, Abaid ur Rehman, et al. “Multiplicative Topological Descriptors of Silicon Carbide.” Applied Mathematics and Nonlinear Sciences, vol. 4, no. 1, 2019, pp. 181–190. https://doi.org/10.2478/AMNS.2019.1.00018.
Virk, Abaid ur Rehman, Tanveer Abbas, and Wasim Khalid. “Multiplicative Topological Descriptors of Silicon Carbide.” Applied Mathematics and Nonlinear Sciences 4, no. 1 (2019): 181–190. https://doi.org/10.2478/AMNS.2019.1.00018.
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