The co-precipitation process is used to create various compositions of the bulk sample of Zn1-xGdxO (x = 0, 0.02, 0.04, 0.06, 0.08, and 0.1). The current study examines the morphological and structural characteristics of Gd-doped ZnO thin films. By using an electron beam approach, the required coatings were deposited onto extremely clean glass substrates. The production of the hexagonal wurtzite single phase of ZnO, which exhibits a strong (002) peak with a peak shift towards lower angle, was discovered by X-ray diffraction. It was discovered that the films' crystallite sizes shrank as the Gd content rose. Calculations have been made for the lattice constant, cell volume, atomic packing fraction, and surface density. Zn1-xGdxO thin films' microstructural characteristics, crystallite size, and lattice strain were computed. Zn1-xGdxO thin films' microstructural characteristics, crystallite size, and lattice strain were computed. The details of the alterations in microstructural parameters in relation to Gd concentration were then covered. Zn1-xGdxO’s Zn-O bond lengths and bond angles were established and have since changed. The turnability of microstructural parameters recommend Zn1-xGdxO samples in various applications in electronic devices.