Article
Temperature Dependent Electrical Study of Ge17Se74Sb9 Thin Film
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Abstract
Bulk sample of Ge17Se74Sb9 alloy was prepared using melt-quench technique. Thin film of the alloy was deposited using thermal evaporation. Thin film was characterized by x-ray diffraction and current-voltage measurements were obtained at different temperatures ranging from 298K to 348K at a step of 5K using an electrometer and were found to be ohmic in nature. The temperature and voltage dependence of resistivity of thin film has been studied.
Keywords
Chalcogenide glasses, Resistivity, Activation energy
Citation
Sharma, P. & Sharma, V. (2015). Temperature dependent electrical study of Ge17Se74Sb9 thin film. International Journal of New Horizons in Physics, 2(1), 21–24. https://doi.org/10.12785/ijnhp/020104
P. Sharma and V. Sharma, “Temperature dependent electrical study of Ge17Se74Sb9 thin film,” International Journal of New Horizons in Physics, vol. 2, no. 1, pp. 21–24, 2015, doi: 10.12785/ijnhp/020104.
Sharma P, Sharma V. Temperature dependent electrical study of Ge17Se74Sb9 thin film. International Journal of New Horizons in Physics. 2015;2(1):21–24. doi:10.12785/ijnhp/020104.
Sharma, P. and Sharma, V. (2015), ‘Temperature dependent electrical study of Ge17Se74Sb9 thin film’, International Journal of New Horizons in Physics, 2(1), pp. 21–24. Available at: https://doi.org/10.12785/ijnhp/020104.
Sharma, Pankaj, and Vineet Sharma. “Temperature Dependent Electrical Study of Ge17Se74Sb9 Thin Film.” International Journal of New Horizons in Physics, vol. 2, no. 1, 2015, pp. 21–24. https://doi.org/10.12785/ijnhp/020104.
Sharma, Pankaj, and Vineet Sharma. “Temperature Dependent Electrical Study of Ge17Se74Sb9 Thin Film.” International Journal of New Horizons in Physics 2, no. 1 (2015): 21–24. https://doi.org/10.12785/ijnhp/020104.
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Published by: Engineering Journals
