The present work investigates the sheet resistance, Rs, measurements versus temperature, T, for 1000 nm Ga-Sb-Te thin films at different heating rates (β = 5, 10, 20, 30 and 40 K/min) in the temperature range from 300 to 673 K. Then, the study of the thermal and electrical properties and thus we will reduce the time and save the effort. As well, the thermal and electrical analysis appears in a new format without the need for procedure the thermal measurements from bulk material of the investigated thin films. After that, the thermal and electrical properties carried out based on the sheet resistance, Rs, measurements as a function of the temperature. The activation energies of crystallization and the rest of thermal parameters such as the growth order parameter n, and the dimension order parameter m, have been computed. The activation energy, Ec, and Avrami index, n, were determined by analyzing the data using JMA methods. The results indicated that the transformation from amorphous to crystalline phases is a complex process includes different mechanisms of nucleation and growth. The change of activation energy with the volume of crystalline fraction was deduced. The crystalline phases for the studied film with heating rate, (β = 5 K/min), as example, were identified via x-ray diffraction (XRD).