In this paper we introduce an approach to increasing the density of field-effect heterotransistors in the framework of wideband amplifiers. In the framework of the approach we consider fabrication of amplifiers using heterostructures. should by annealed→should be annealed. with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation-induced defects should by annealed in the framework of optimized scheme. After this optimization the above increasing of density of field-effect heterotransistors could be achieved as several tens of percent. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure by using porous buffer layers. In this situation one can find densification of porous material with decreasing of mismatch-induced stress. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.